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Large Magnetoresistance Ratio in Ferromagnetic Single-Electron Transistors in the Strong Tunneling Regime

机译：强隧穿状态下铁磁单电子晶体管的大磁电阻比

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X. H. Wang; Arne Brataas;
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年度 2008
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1. Spin relaxation and tunnel magnetoresistance of a ferromagnet/superconductor/ferromagnet single-electron tunneling transistor [J] . Imamura H., Utsumi Y., Ebisawa H. Physica, E. Low-dimensional systems & nanostructures . 2003,第1a3期

机译：铁磁体/超导体/铁磁体单电子隧穿晶体管的自旋弛豫和隧道磁阻
2. Parity effect and tunnel magnetoresistance of ferromagnet/superconductor/ferromagnet single-electron tunneling transistors - art. no. 054503 [J] . Imamura H., Utsumi Y., Ebisawa H. Physical Review, B. Condensed Matter . 2002,第5期

机译：铁磁体/超导体/铁磁体单电子隧穿晶体管的奇偶效应和隧道磁阻-艺术。没有。 054503
3. Correlation between polarity of magnetoresistance ratio and tunnel resistance in ferromagnetic single-electron transistor with superconductive island [J] . Masashi Takiguchi, Hiroshi Shimada, Yoshinao Mizugaki Japanese journal of applied physics . 2014,第4期

机译：具有超导岛的铁磁单电子晶体管的磁阻比极性与隧道电阻之间的相关性
4. Magnetoresistance in single-electron transistors comprising a superconducting island with ferromagnetic leads [C] . Yoshinao Mizugaki, Masashi Takiguchi, Nobuyuki Tamura, International Conference on Low Temperature Physics . 2017

机译：单电子晶体管中的磁阻，包括具有铁磁引线的超导岛
5. Engineering and characterizing inverse tunneling magnetoresistance magnetic tunnel junctions with novel ferromagnetic electrodes. [D] . Xiang, Hua. 2011

机译：用新型铁磁电极设计和表征逆隧穿磁阻磁隧道结。
6. Quantum criticality in ferromagnetic single-electron transistors [O] . Stefan Kirchner, Lijun Zhu, Qimiao Si, 2005

机译：铁磁单电子晶体管的量子临界性
7. Large Magnetoresistance Ratio in Ferromagnetic Single-Electron Transistors in the Strong Tunneling Regime [O] . Wang, X. H., Brataas, A. 1999

机译：铁磁单电子中的大磁电阻率强隧道制度中的晶体管
8. Effect of Tunnel Resistance in the Strong Tunneling Regime on the Conductance of the Single Electron Transistors Fabricated Using Focused Ion Beam Etching; Conference paper [R] . Karre, P. S., Bergstrom, P. L., Mallick, G., 2006

机译：强隧道内隧道阻力对聚焦离子束刻蚀制备单电子晶体管电导的影响2。会议文件

Large Magnetoresistance Ratio in Ferromagnetic Single-Electron Transistors in the Strong Tunneling Regime

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